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Array of Two UV-Wavelength Detector Types

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9 Author(s)
Ngu, Yves ; Microelectron. Div., Device Modeling Group, IBM, Burlington, VT, USA ; Peckerar, M.C. ; Sander, D. ; Eddy, C.R.
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An approach to fabricate a set of simultaneously operating dual-UV-wavelength detectors is described. The fabrication flow relies on the confined-epitaxy growth method. The confined epitaxial AlxGa1-xN-layer stacking approach is used to establish simultaneous multiple UV-wavelength detection. The chosen stoichiometries of specific epitaxial layers set the wavelength sensitivity at approximately 355 nm for pixel A and 320 nm for pixel B. Spectral responsivity plots of the detectors clearly show the dual-UV-color sensitivity of the pair. The detectors have signal-to-noise ratios of 15 and 17 and spectral responsivity values of 0.12 AAV and 0.05 AAV for pixel A and pixel B, respectively.

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Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 6 )