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An approach to fabricate a set of simultaneously operating dual-UV-wavelength detectors is described. The fabrication flow relies on the confined-epitaxy growth method. The confined epitaxial AlxGa1-xN-layer stacking approach is used to establish simultaneous multiple UV-wavelength detection. The chosen stoichiometries of specific epitaxial layers set the wavelength sensitivity at approximately 355 nm for pixel A and 320 nm for pixel B. Spectral responsivity plots of the detectors clearly show the dual-UV-color sensitivity of the pair. The detectors have signal-to-noise ratios of 15 and 17 and spectral responsivity values of 0.12 AAV and 0.05 AAV for pixel A and pixel B, respectively.