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Low leakage current technology in P+N silicon photodiode detector

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5 Author(s)
Myunghwan Park ; Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA ; Kwangsik Choi ; Singh, S. ; Aslam, S.
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In conclusion, we have successfully fabricated 4cm2 large area silicon photodiode detectors with extremely low leakage currents (InA/cm2). The effectiveness of shallow implantation, guard-ring structures, and gettering have been investigated.

Published in:

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Date of Conference:

9-11 Dec. 2009